Douglas Buchanan

This user account status is Approved
Electrical and Computer Engineering
Sensors, Micro- Nano- Electronic Materials and Devices, Materials Science and Engineering
advanced silicon-based thechnologies - materials and devices, microfluidics systems in silicon, olfactory sensor desing, MEMs-based ultra-sonic transducers and sensors
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Research interests include materials and devices for advanced silicon-based technologies, microfluidics systems in silicon for lab-on-chip applications, olfactory sensor design and integration and more recently has started to work with MEMs-based ultra-sonic transducers and sensors.

100.T. A. Emadi, and D. A. Buchanan, “A novel 6×6 element MEMS capacitive ultrasonic transducer with multiple moving membranes for high performance imaging applications,” Journal of Sensors and Actuators A: Physical vol. 222, pp. 309-313 (2015).

99.T. A. Emadi, and D. A. Buchanan, “Design and fabrication of a novel MEMS capacitive transducer with Multiple Moving Membrane, M3-CMUT,” IEEE Transactions on Electron Devices, vol. 61, no. 3, pp. 890-896 (2014).

98.T. A. Emadi, and D. A. Buchanan, “Multiple moving membrane CMUT with enlarged membrane displacement and low pull-down voltage,” IEEE Electron Device Letters, vol. 34, no. 12, pp.1578-1580 (2013).

97.T. A. Emadi, and D. A. Buchanan, “Wide range beam steering capability of a 1-D MEMS transducer imager array with directional beam pattern,” Journal of Sensors and Actuators A: Physical vol. 202 (2013).

96.I. Yahyaie, D. A. Buchanan, G. E. Bridges, D. J. Thomson, and D. Oliver, “High-Resolution Imaging of Gigahertz Polarization Response Arising From the Interference of Reflected Surface Acoustic Waves,” IEEE Transactions on UltrasonIcs, FerroElectrics, and Frequency Control, vol. 59, no. 6, p. 1212 (2012).

95.N. Masood, G.A. Ferrier, D.J. Thomson, D.A. Buchanan, Performance of a multi-electrode silicon-based dielectrophoretic cage device using four electrical contacts, Microelectronic Engineering 88, 1795–1797 (2011).

94.S. Rudenja, A. Minko, and D. A. Buchanan, "Low-temperature deposition of stoichiometric HfO2 on silicon: Analysis and quantification of the HfO2/Si interface from electrical and XPS measurements," APPLIED SURFACE SCIENCE, vol. 257, pp. 17-21, Oct 2010.

93.M. Alsehaili, S. Noghanian, A. R. Sebak, and D. A. Buchanan, "Angle and Time of Arrival Statistics of a Three Dimensional Geometrical Scattering Channel Model for Indoor and Outdoor Propagation Environments," Progress in Electromagnetics Research-Pier, vol. 109, pp. 191-209, 2010.

92.M. Alsehaili, S. Noghanian, D. A. Buchanan, and A. Sebak, "Angle of arrival statistics of a three dimensional geometrical scattering channel model for indoor and outdoor propagation environments publication.," IEEE Ant. Wireless Prop. Lett., vol. 9, pp. 946-949, accepted for publication 2010.

91.P. Patel, M. Nadesalingam, R. M. Wallace, and D. A. Buchanan, "Physical and optoelectronic characterization of reactively sputtered molybdenum-silicon-nitride alloy metal gate electrodes," J. Appl. Phys., vol. 105, p. 024517, 2009.

90.D. Felnhofer, E. P. Gusev, and D. A. Buchanan, "Photocurrent measurements for oxide charge characterization of high-κ dielectric metal-oxide-semiconductor capacitors," J. Appl. Physics, vol. 103 p. 054101, 2008.

89.D. A. Buchanan and D. Felnhofer, "On the characterization of electronically active defects in high-k gate dielectrics," in Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices. vol. 220, E. Gusev, Ed., 2006, pp. 41-59.

88.D. Felnhofer, E. P. Gusev, P. Jamison, and D. A. Buchanan, "Charge trapping and detrapping in HfO2 high-κ MOS capacitors using internal photoemission," Microelectronic Engineering, vol. 80, pp. 58-61, 2005.

87.M. Dragosavac, D. J. Paul, M. Pepper, A. B. Fowler, and D. A. Buchanan, "Electron effective mass in ultrathin oxide silicon MOSFET inversion layers," Semiconductor Science and Technology, vol. 20, pp. 664-667, Aug 2005.

86.M. Dragosavac, D. J. Paul, M. Pepper, A. B. Fowler, and D. A. Buchanan, "Electron effective mass enhancement in ultrathin gate-oxide Si-MOSFETs," in Physics of Semiconductors, Pts A and B. vol. 772, J. Menendez and C. G. VanDeWalle, Eds., 2005, pp. 495-496.

85.D. A. Buchanan, "Beyond Microelectronics: Materials and Technology for Nano-scale CMOS Devices," Phys. Stat. Sol. (c), vol. 1, pp. S155-S162, 2004.

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